FDD5N50NZF

更新时间： 2024-11-18 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	304K
描述
N-Channel MOSFET 500V, 3.7A, 1.75Î©

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FDD5N50NZF 数据手册

February 2012

UniFET-II

FDD5N50NZF

N-Channel MOSFET

500V, 3.7A, 1.75Ω

Features

Description

•

R_DS(on)= 1.47Ω ( Typ.)@ V_GS= 10V, I_D= 1.85A

Low Gate Charge ( Typ. 9nC)

Low C_rss( Typ. 4pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advance technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switching mode power supplies and active power factor

correction.

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

•

ESD Imoroved Capability

RoHS Compliant

D-PAK

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDD5N50NZF

Units

Drain to Source Voltage

Gate to Source Voltage

500

±25

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

3.7

I_D

Drain Current

2.2

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

165

3.3

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.25

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

62.5

0.5

P_D

Power Dissipation

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

FDD5N50NZF

R_θJC

R_θJA

^oC/W

62.5

FDD5N50NZF Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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