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FDB0300N1007L

更新时间： 2024-11-15 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 403K
描述
N 沟道，PowerTrench® MOSFET，100V，200A，3mΩ

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中文翻译

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FDB0300N1007L 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G6Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.98
雪崩能效等级（Eas）：843 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：200 A最大漏极电流 (ID)：200 A
最大漏源导通电阻：0.003 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：60 pFJEDEC-95代码：TO-263CB
JESD-30 代码：R-PSSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：250 W
最大脉冲漏极电流 (IDM)：1090 A表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：115 ns最大开启时间（吨）：91 ns
Base Number Matches：1

FDB0300N1007L 数据手册

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中文翻译

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 		N-Channel PowerTrench㈢ MOSFET 75V, 235A, 3.1m
FDB031N08 ONSEMI

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 		N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ
FDB035AN06_F085 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 60V, 80A, 3.5m
FDB035AN06A0 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
FDB035AN06A0 ONSEMI

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 		N 沟道 PowerTrench® MOSFET 60V，80 A，3.5 mΩ
FDB035AN06A0_12 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 60V, 80A, 3.5m
FDB035AN06A0_F085 FAIRCHILD

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 		Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
FDB035AN06A0_NL FAIRCHILD

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 		Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
FDB035AN06A0_NL ROCHESTER

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 		22A, 60V, 0.0035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263AB, 3 P
FDB035AN06A0-F085 ONSEMI

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 		60 V、80 A、3.2 mΩ、D2PAKN 沟道 PowerTrench®

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