Datasheet > FDB045AN08

FDB045AN08

更新时间： 2024-11-13 22:17:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	235K
描述
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз

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FDB045AN08 数据手册

April 2002

FDB045AN08A0

N-Channel UltraFET^®Trench MOSFET

75V, 80A, 4.5mΩ

Features

Applications

•

r_DS(ON)= 3.9mΩ (Typ.), V_GS= 10V, I_D= 80A

Q_g(tot) = 92nC (Typ.), V_GS= 10V

Low Miller Charge

•

42V Automotive Load Control

Starter / Alternator Systems

Electronic Power Steering Systems

Electronic Valve Train Systems

Low Qrr Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V systems

Formerly developmental type 82684

GATE

DRAIN

SOURCE

(FLANGE)

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C< 145^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

600

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

310

P_D

2.0

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-263

0.48

^oC/W

Thermal Resistance Junction to Ambient TO-263 (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB045AN08A0 Rev. A

12 3 4 5 6 7...11

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