Datasheet > FDB047N10

FDB047N10

更新时间： 2024-11-14 03:09:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲 PC
页数	文件大小	规格书
8页	547K
描述
N-Channel PowerTrench㈢ MOSFET 100V, 164A, 4.7mヘ

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替代型号

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FDB047N10 数据手册

August 2008

FDB047N10

N-Channel PowerTrench MOSFET

100V, 164A, 4.7mΩ

Description

General Description

•

R_DS(on)= 3.9mΩ ( Typ.) @ V_GS= 10V, I_D= 75A

This N-Channel MOSFET is producedusing Fairchild Semicon-

ductor’s advance PowerTrench process that has been especially

tailored to minimize the on-state resistance and yet maintain

superior switching performance.

Fast switching speed

Low gate charge

High performance trench technology for extremely low R_DS(on)

High power and current handing capability

RoHS compliant

Application

•

DC to DC converters / Synchronous Rectification

D²-PAK

FDB Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

±20

164*

116*

Drain Current

Continuous (T_C=

25^oC, Silicon Limited)

I_D

Continuous (T_C= 100^oC, Silicon Limited)

Continuous (T_C

25^oC, Package Limited)

120

I_DM

Drain Current

- Pulsed

(Note 1)

656*

1153

4.5

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 3)

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

375

P_D

Power Dissipation

2.5

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

R_θJC

R_θJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

0.4

Units

^oC/W

62.5

FDB047N10 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7 8

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FDB047N10 替代型号

型号	品牌	替代类型	描述	数据表
IRFS4010PBF	INFINEON	功能相似	HEXFET Power MOSFET

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