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FDB047N10 PDF预览

FDB047N10

更新时间： 2024-11-15 11:10:31
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲晶体管
页数 文件大小 规格书
10页 453K
描述
N 沟道 PowerTrench® MOSFET 100V，164A，4.7mΩ

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中文翻译

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FDB047N10 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.96Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：166949
Samacsys Pin Count：4Samacsys Part Category：Integrated Circuit
Samacsys Package Category：TO-XXX (Inc. DPAK)Samacsys Footprint Name：TO263(DDPAK)
Samacsys Released Date：2015-04-13 16:42:45Is Samacsys：N
雪崩能效等级（Eas）：1153 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：164 A最大漏极电流 (ID)：120 A
最大漏源导通电阻：0.0047 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：375 W
最大脉冲漏极电流 (IDM)：656 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDB047N10 数据手册

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