5秒后页面跳转
捷配首页

Datasheet > FDB045AN08A0_12
FDB045AN08A0_12 PDF预览

FDB045AN08A0_12

更新时间： 2024-11-14 12:23:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 258K
描述
N-Channel PowerTrench® MOSFET 75V, 80A, 4.5m

阅读下载

中文翻译

获取价格

FDB045AN08A0_12 数据手册

 浏览型号FDB045AN08A0_12的Datasheet PDF文件第2页浏览型号FDB045AN08A0_12的Datasheet PDF文件第3页浏览型号FDB045AN08A0_12的Datasheet PDF文件第4页浏览型号FDB045AN08A0_12的Datasheet PDF文件第5页浏览型号FDB045AN08A0_12的Datasheet PDF文件第6页浏览型号FDB045AN08A0_12的Datasheet PDF文件第7页 
June 2010  
_
FDB045AN08A0 F085  
®
N-Channel PowerTrench MOSFETꢀ  
75V, 80A, 4.5mꢁ  
Features  
Applications  
•
•
•
•
•
•
•
rDS(ON) = 3.9mꢁ (Typ.), VGS = 10V, ID = 80A  
Qg(tot) = 92nC (Typ.), VGS = 10V  
Low Miller Charge  
•
•
•
•
•
•
•
42V Automotive Load Control  
Starter / Alternator Systems  
Electronic Power Steering Systems  
Electronic Valve Train Systems  
DC-DC converters and Off-line UPS  
Low QRR Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V systems  
RoHS Compliant  
Formerly developmental type 82684  
D
GATE  
G
DRAIN  
SOURCE  
(FLANGE)  
TO-263AB  
S
FDB SERIES  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
75  
V
V
VGS  
ꢂ20  
Continuous (TC < 137oC, VGS = 10V)  
90  
19  
A
A
ID  
Continuous (Tamb = 25oC, VGS = 10V, with RꢃJA = 43oC/W)  
Figure 4  
600  
A
Pulsed  
EAS  
Single Pulse Avalanche Energy (Note 1)  
mJ  
Power dissipation  
Derate above 25oC  
Operating and Storage Temperature  
310  
W
PD  
2.0  
-55 to 175  
W/oC  
oC  
TJ, TSTG  
Thermal Characteristics  
Thermal Resistance Junction to Case TO-263  
0.48  
62  
oC/W  
oC/W  
oC/W  
RꢃJC  
RꢃJA  
RꢃJA  
Thermal Resistance Junction to Ambient TO-263 (Note 2)  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
43  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2010 Fairchild Semiconductor Corporation  
FDB045AN08A0_F085 Rev. A  
www.fairchildsemi.com  
1234567...11

中文翻译

下载PDF

与FDB045AN08A0_12相关器件

型号 品牌 获取价格 描述 数据表
FDB045AN08A0_NL FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
FDB045AN08A0-F085 ONSEMI

获取价格

 		75 V、80 A、3.9 mΩ、D2PAKN 沟道 PowerTrench®
FDB045AN08A0-SN00005 FAIRCHILD

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDB047N10 FAIRCHILD

获取价格

 		N-Channel PowerTrench㈢ MOSFET 100V, 164A, 4.7
FDB047N10 ONSEMI

获取价格

 		N 沟道 PowerTrench® MOSFET 100V，164A，4.7mΩ
FDB047N10_12 FAIRCHILD

获取价格

 		N-Channel PowerTrench® MOSFET 100V, 164A, 4.
FDB050AN06A0 FAIRCHILD

获取价格

 		N-Channel PowerTrench MOSFET
FDB050AN06A0 ONSEMI

获取价格

 		N 沟道 Power Trench® MOSFET 60V，80A，5mΩ
FDB050AN06A0_NL FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Met
FDB050AN06A0-SN00125 FAIRCHILD

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

与FDB045AN08A0_12相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证