Datasheet > FDB039N06_12

FDB039N06_12

更新时间： 2024-11-14 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	271K
描述
N-Channel PowerTrenchÂ® MOSFET 60V, 174A, 3.9mÎ©

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FDB039N06_12 数据手册

May 2012

FDB039N06

N-Channel PowerTrench MOSFET

60V, 174A, 3.9mΩ

Features

General Description

•

R_DS(on)= 2.95mΩ ( Typ.) @ V_GS= 10V, I_D= 75A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low

R_DS(on)

Application

•

High Power and Current Handling Capability

RoHS Compliant

•

DC to DC convertors / Synchronous Rectification

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

-Continuous (T_C= 25^oC, Silicion Limited)

-Continuous (T_C= 100^oC, Silicion Limited)

-Continuous (T_C= 25^oC, Package Limited)

174*

123*

120

I_D

Drain Current

I_DM

Drain Current

- Pulsed

(Note 1)

(Note 2)

(Note 3)

696

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

872

7.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

231

P_D

Power Dissipation

1.54

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

R_θJC

Parameter

Thermal Resistance, Junction to Case

Ratings

0.65

Units

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper)

Thermal Resistance, Junction to Ambient (1 in²pad of 2 oz copper)

62.5

^oC/W

R_θJA

FDB039N06 Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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