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FDB035AN06A0

更新时间： 2024-11-15 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI PC开关晶体管
页数 文件大小 规格书
13页 1016K
描述
N 沟道 PowerTrench® MOSFET 60V，80 A，3.5 mΩ

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中文翻译

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FDB035AN06A0 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.75
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：166947Samacsys Pin Count：4
Samacsys Part Category：Integrated CircuitSamacsys Package Category：TO-XXX (Inc. DPAK)
Samacsys Footprint Name：TO263(DDPAK)Samacsys Released Date：2015-04-13 16:42:44
Is Samacsys：N雪崩能效等级（Eas）：625 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：22 A
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.0035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：310 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDB035AN06A0 数据手册

 浏览型号FDB035AN06A0的Datasheet PDF文件第2页浏览型号FDB035AN06A0的Datasheet PDF文件第3页浏览型号FDB035AN06A0的Datasheet PDF文件第4页浏览型号FDB035AN06A0的Datasheet PDF文件第5页浏览型号FDB035AN06A0的Datasheet PDF文件第6页浏览型号FDB035AN06A0的Datasheet PDF文件第7页 
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
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FDB035AN06A0 替代型号

型号 品牌 替代类型 描述 数据表
FDB035AN06A0_NL FAIRCHILD

功能相似

 Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me

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