Datasheet > FDB035AN06A0_12

FDB035AN06A0_12

更新时间： 2024-11-14 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	287K
描述
N-Channel PowerTrenchÂ® MOSFET 60V, 80A, 3.5mÎ©

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FDB035AN06A0_12 数据手册

January 2012

FDB035AN06A0_F085

N-Channel PowerTrench^®MOSFET

60V, 80A, 3.5mΩ

Features

Applications

•

r_DS(ON)= 3.2mΩ (Typ.), V_GS= 10V, I_D= 80A

Q_g(tot) = 95nC (Typ.), V_GS= 10V

Low Miller Charge

•

Motor / Body Load Control

ABS Systems

Powertrain Management

Injection Systems

Low Qrr Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

Formerly developmental type 82584

GATE

DRAIN

SOURCE

(FLANGE)

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C< 153^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

625

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

310

P_D

2.07

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-263

0.48

^oC/W

Thermal Resistance Junction to Ambient TO-263, (Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

systems certification.

FDB035AN06A0_F085 Rev. A

12 3 4 5 6 7...11

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