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FDB024N06 PDF预览

FDB024N06

更新时间: 2024-11-15 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 857K
描述
N 沟道,PowerTrench® MOSFET,60V,265A,2.4mΩ

FDB024N06 数据手册

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FDB024N06 替代型号

型号 品牌 替代类型 描述 数据表
NVB5860NT4G ONSEMI

类似代替

功率 MOSFET,60V,220A,3mΩ,单 N 沟道,D2PAK
NVB5860NLT4G ONSEMI

类似代替

N-Channel Power MOSFET
NTB5860NT4G ONSEMI

类似代替

N-Channel Power MOSFET

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