Datasheet > EMB27N03K

EMB27N03K

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	173K
描述
TSOT23-6

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中文翻译

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数据手册

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EMB27N03K 数据手册

EMB27N03K

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

30V

27mΩ

DSON (MAX.)

N‐Channel MOSFET

PIN1

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate‐Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 70 °C

Pulsed Drain Current¹

I_DM

T_A= 25 °C

1.92

Power Dissipation

P_D

°C

T_A= 70 °C

1.23

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_θJA

TYPICAL

MAXIMUM

UNIT

(

T ≤ 10sec

)

Junction‐to‐Ambient³

°C / W

100

(

Steady State

)

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1％

³Pulse width limited by maximum junction temperature.

2018/11/09

p.1

12 3 4 5 6

中文翻译

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