Datasheet > EGP10CT50R

EGP10CT50R

更新时间： 2024-09-20 06:06:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	47K
描述
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-41, D4, 2 PIN

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EGP10CT50R 数据手册

EGP10A - EGP10K

Features

• Superfast recovery time for high

efficiency.

• Low forward voltage, high current

capability.

•

Low leakage current.

DO-41

COLOR BAND DENOTES CATHODE

• High surge current capability.

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Value

Symbol

Parameter

Units

10A 10B 10C 10D 10F 10G 10J 10K

V_RRM

I_F(AV)

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current,

100

150 200 300 400 600 800

1.0

.375 " lead length @ T = 55 C

I_FSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

-65 to +150

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

2.5

R_θJA

C/W

Electrical Characteristics

T_A= 25°C unless otherwise noted

Device

Symbol

Parameter

Units

10A 10B 10C 10D 10F 10G 10J 10K

V_F

t_rr

Forward Voltage @ 1.0 A

0.95

1.25

1.7

Reverse Recovery Time

I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

I_R

5.0

100

µA

Reverse Current @ rated V_RT = 25 C

T_A= 125°C

C_T

Total Capacitance

V_R= 4.0 V, f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

EPG10A - EPG10K, Rev. C

12 3

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