5秒后页面跳转
EGP10D PDF预览

EGP10D

更新时间: 2024-01-31 08:17:50
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管功效局域网
页数 文件大小 规格书
2页 91K
描述
HIGH EFFICIENCY RECTIFIER

EGP10D 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

EGP10D 数据手册

 浏览型号EGP10D的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
EGP10A(Z) --- EGP10G(Z)  
BL  
VOLTAGE RANGE: 50 --- 400 V  
CURRENT: 1.0 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
Diffused junction  
DO - 41  
Low leakage  
Low forward voltage  
High current capability  
Easilycleaned with alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO--41,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-750,Method 2026  
Polarity: Color band denotes cathode  
Weight: 0.012 ounces,0.34 grams  
Mounting position: Any  
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
EGP  
10A  
EGP  
10B  
EGP  
10F  
EGP  
10G  
EGP  
10C  
EGP  
10D  
UNITS  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
300  
210  
300  
400  
280  
400  
150  
105  
150  
200  
140  
200  
V
V
V
VRRM  
VRMS  
VDC  
MaximumDC blocking voltage  
100  
Maximumaverage forw ard rectified current  
1.0  
A
IF(AV)  
9.5mmlead length  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
30.0  
A
IFSM  
@TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0 A  
0.95  
22  
1.25  
15  
VF  
IR  
V
A
Maximumreverse current  
@TA=25  
5.0  
at rated DC blocking voltage @TA=125  
Maximumreverse recovery time (Note1)  
100.0  
50  
ns  
trr  
CJ  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
pF  
50  
RθJA  
TJ  
/ W  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied reverse uoltage of 4.0V DC.  
3.Thermal resistance from junction to ambient.  
BLGALAXY ELECTRICAL  
1.  
Document Number 0262008  

与EGP10D相关器件

型号 品牌 描述 获取价格 数据表
EGP10D.TR FAIRCHILD Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

获取价格

EGP10D/4H VISHAY Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

获取价格

EGP10D/64 VISHAY Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

获取价格

EGP10D/65 VISHAY Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

获取价格

EGP10D/74 VISHAY Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

获取价格

EGP10D/92 VISHAY Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

获取价格