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EGP10D-E3/73 PDF预览

EGP10D-E3/73

更新时间: 2024-11-21 06:56:19
品牌 Logo 应用领域
威世 - VISHAY 信号二极管
页数 文件大小 规格书
4页 104K
描述
Glass Passivated Ultrafast Rectifier

EGP10D-E3/73 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.17Is Samacsys:N
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

EGP10D-E3/73 数据手册

 浏览型号EGP10D-E3/73的Datasheet PDF文件第2页浏览型号EGP10D-E3/73的Datasheet PDF文件第3页浏览型号EGP10D-E3/73的Datasheet PDF文件第4页 
EGP10A thru EGP10G  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
FEATURES  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 260 °C, 40 s  
*Glass Encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
to Patent No. 3,930,306  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and  
freewheeling application in switching mode converters  
and inverters for consumer, computer and  
telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
trr  
50 V to 200 V  
30 A  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over glass body  
50 ns  
Epoxy meets UL 94V-0 flammability rating  
VF  
0.95 V, 1.25 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS T = 25 °C unless otherwise noted  
A
PARAMETER  
SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
1.0  
30  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
Document Number: 88582  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

EGP10D-E3/73 替代型号

型号 品牌 替代类型 描述 数据表
EGP10DHE3/73 VISHAY

完全替代

Glass Passivated Ultrafast Rectifier
EGP10D-E3/54 VISHAY

完全替代

Glass Passivated Ultrafast Rectifier
UF1003-T DIODES

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