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EGP10D-AP PDF预览

EGP10D-AP

更新时间: 2024-11-21 19:30:59
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 172K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

EGP10D-AP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.07外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EGP10D-AP 数据手册

 浏览型号EGP10D-AP的Datasheet PDF文件第2页浏览型号EGP10D-AP的Datasheet PDF文件第3页浏览型号EGP10D-AP的Datasheet PDF文件第4页 
M C C  
Micro Commercial Components  
EGP10A  
THRU  
EGP10K  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1.0 Amp Glass  
Features  
Glass passivated cavity-free junction.  
Passivated High  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
Efficient Rectifiers  
50 to 800 Volts  
x
Marking : Cathode band and type number  
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Maximum Ratings  
Operating Temperature: -55OC to +150OC  
DO-41  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 50OC/W Junction to Ambient  
Maximum  
Maximum DC  
Blocking  
Voltage  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS Voltage  
MCC  
Part Number  
D
EGP10A  
EGP10B  
EGP10D  
EGP10F  
EGP10G  
EGP10J  
EGP10K  
50V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
100V  
200V  
300V  
400V  
600V  
800V  
140V  
210V  
280V  
420V  
560V  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
D
Average Forward  
Current  
IF(AV)  
1.0 A  
T = 55OC  
A
Peak Forward Surge  
Current  
8.3ms, half  
sine  
I
30A  
FSM  
C
Maximum  
Instantaneous Forward  
Voltage  
IF=1.0A  
T =25OC  
EGP10A-10D  
EGP10F-10G  
EGP10J-10K  
VF  
1.00V  
1.25V  
1.70V  
A
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
Maximum Reverse  
Recovery Time  
EGP10A-10G  
DIM  
A
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
IR  
5.0uA  
100uA  
T = 25OC  
.166  
4.10  
2.00  
.70  
A
B
.080  
T = 125OC  
C
.028  
A
D
1.000  
25.40  
---  
IF=0.5A,  
IR=1.0A,  
IRR=0.25A  
trr  
50nS  
75nS  
EGP10J-10K  
T=25OC  
J
Typical Junction  
Capacitance  
Measured at  
1.0MHz,  
VR=4.0V  
EGP10A-10D  
EGP10F-10K  
CJ  
22pF  
15pF  
www.mccsemi.com  
1 of 4  
Revision: 7  
2008/01/30  

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