EGP10D-B

更新时间： 2024-11-21 13:07:35

品牌	Logo	应用领域
美微科 - MCC		整流二极管高效整流二极管
页数	文件大小	规格书
3页	92K
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中文翻译

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数据手册

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EGP10D-B 数据手册

M C C

EGP10A

THRU

EGP10K

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

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1.0 Amp Glass

Passivated High

Efficient Rectifiers

50 to 800 Volts

Features

Superfast recovery time for high efficiency

Glass passivated cavity-free junction, Plastic Case

Low forward voltage, high current capability

Low leakage current

Maximum Ratings

Operating Temperature: -55^OC to +150^OC

DO-41

Storage Temperature: -55^OC to +150^OC

Typical Thermal Resistance: 50^OC/W Junction to Ambient

Maximum

Maximum DC

Blocking

Recurrent

Peak Reverse

Voltage

Maximum

RMS Voltage

MCC

Part Number

Voltage

EGP10A

EGP10B

EGP10D

EGP10F

EGP10G

EGP10J

EGP10K

50V

35V

70V

50V

100V

200V

300V

400V

600V

800V

100V

200V

300V

400V

600V

800V

140V

210V

280V

420V

560V

Cathode

Mark

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Average Forward

I_F(AV)

1.0 A

T = 55^OC

Current

Peak Forward Surge

Current

8.3ms, half

sine

30A

FSM

Maximum

Instantaneous Forward

Voltage

I_F=1.0A

EGP10A-10D

EGP10F-10G

EGP10J -10K

V_F

0.95V

1.25V

1.70V

T =25^OC

DIMENSIONS

INCHES

MIN

.166

.080

.028

MIN

4.10

2.00

.70

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

Maximum Reverse

Recovery Time

EGP10A-10G

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

NOTE

I_R

5.0uA

100uA

T = 25^OC

T = 125^OC

1.000

25.40

---

I_F=0.5A,

I_R=1.0A,

I_RR=0.25A

t_rr

50nS

75nS

EGP10J-10K

T=25^OC

Typical Junction

Capacitance

Measured at

1.0MHz,

V_R=4.0V

EGP10A-10D

EGP10F-10K

C_J

22pF

15pF

www.mccsemi.com

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