Datasheet > EGP10D/65

EGP10D/65

更新时间： 2024-11-25 14:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	337K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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中文翻译

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技术参数
数据手册

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EGP10D/65 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.69	Is Samacsys：	N
Base Number Matches：	1

EGP10D/65 数据手册

EGP10A thru EGP10G

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 200 V

30 A

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_jmax.

*Glass Encapsulation

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

DO-204AL (DO-41)

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum RMS voltage

Maximum DC blocking voltage

100

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Operating and storage temperature range

T_J,T_STG

- 65 to + 150

°C

Document Number 88582

24-Oct-05

www.vishay.com

12 3 4

中文翻译

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与EGP10D/65相关器件

型号	品牌	获取价格	描述	数据表
EGP10D/74	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/92	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D_15	LRC	获取价格	Plastic package has Underwriters Laboratory
EGP10D-5410/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL
EGP10D-A	MCC	获取价格	Rectifier Diode,
EGP10D-AP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKA
EGP10D-B	MCC	获取价格	暂无描述
EGP10D-BP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKA
EGP10D-E3/54	VISHAY	获取价格	Glass Passivated Ultrafast Rectifier