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EGP10D.TR PDF预览

EGP10D.TR

更新时间: 2024-11-22 10:25:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 47K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

EGP10D.TR 数据手册

 浏览型号EGP10D.TR的Datasheet PDF文件第2页浏览型号EGP10D.TR的Datasheet PDF文件第3页 
EGP10A - EGP10K  
Features  
Superfast recovery time for high  
efficiency.  
Low forward voltage, high current  
capability.  
Low leakage current.  
DO-41  
COLOR BAND DENOTES CATHODE  
High surge current capability.  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
10A 10B 10C 10D 10F 10G 10J 10K  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current,  
50  
100  
150 200 300 400 600 800  
V
A
1.0  
.375 " lead length @ T = 55 C  
°
L
IFSM  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
30  
A
Storage Temperature Range  
-65 to +150  
-65 to +150  
C
C
Tstg  
TJ  
°
°
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
2.5  
50  
W
RθJA  
C/W  
°
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Parameter  
Units  
10A 10B 10C 10D 10F 10G 10J 10K  
VF  
trr  
Forward Voltage @ 1.0 A  
0.95  
22  
1.25  
1.7  
V
Reverse Recovery Time  
50  
75  
ns  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
IR  
5.0  
100  
A
µ
µA  
Reverse Current @ rated VR T = 25 C  
°
A
TA = 125°C  
CT  
Total Capacitance  
15  
pF  
VR = 4.0 V, f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
EPG10A - EPG10K, Rev. C  

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