Datasheet > EGP10D

EGP10D

更新时间： 2024-11-25 12:55:31

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管局域网
页数	文件大小	规格书
2页	2506K
描述
Glass Passivated High Efficient Plastic Rectifiers

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中文翻译

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数据手册

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EGP10D 数据手册

EGP10A THRU EGP10M

50V-1000V 1.0A

Glass Passivated High Efficient Plastic Rectifiers

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

EGP EGP EGP EGP EGP EGP EGP EGP

Type Number

Units

10A 10B 10D 10F 10G 10J 10K 10M

50 100 200 300 400 600 800 1000

35 70 140 210 280 420 560 700

50 100 200 300 400 600 800 1000

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375” (9.5mm) Lead Length

@T_A= 55℃

1.0

I_(AV)

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

30.0

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.0A

0.95

1.25

1.7

V_F

Maximum DC Reverse Current @ T_A=25℃

at Rated DC Blocking Voltage @ T_A=125℃

5.0

100.0

I_R

Maximum Reverse Recovery Time ( Note 1 )

Trr

T_J=25

℃

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Rθ_JA

T_J

C/W

-65 to + 150

Storage Temperature Range

STG

Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.

3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.

1 of 2

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

中文翻译

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与EGP10D相关器件

型号	品牌	获取价格	描述	数据表
EGP10D.TR	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
EGP10D/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/64	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/74	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/92	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D_15	LRC	获取价格	Plastic package has Underwriters Laboratory
EGP10D-5410/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL
EGP10D-A	MCC	获取价格	Rectifier Diode,

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