Datasheet > EGP10D

EGP10D

更新时间： 2024-11-24 22:30:47

品牌	Logo	应用领域
智威 - ZOWIE		二极管局域网
页数	文件大小	规格书
2页	63K
描述
SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

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中文翻译

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技术参数
数据手册

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EGP10D 技术参数

生命周期：	Contact Manufacturer	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	风险等级：	5.2
Base Number Matches：	1

EGP10D 数据手册

EGP10A THRU EGP10M

SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

DO-204AL

FEATURES

* GPRC (Glass Passivated Rectifier Chip) inside

* Glass passivated cavity-free junction

* Superfast recovery time for high efficiency

* Low forward voltage , high current capability

* Low leakage current

0.107(2.70)

0.080(2.00)

DIA.

* High surge current capability

* High temperature soldering guaranteed: 260^oC/10 seconds,

0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension

* Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

MECHANICAL DATA

0.034(0.86)

0.028(0.71)

DIA.

Case : JEDEC DO-204AL molded plastic over glass body

Terminals : Plated axial leads , solderable per MIL-STD-750,

Method 2026

*Dimensions in inches and (millimeters)

Polarity : Color band denotes cathode end

Mounting Position : Any

Weight : 0.012 ounes , 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature

EGP10

SYMBOLS

UNITS

unless otherwise specified.

Volts

Maximum repetitive peak reverse voltage

VRRM

VRMS

VDC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Maximum RMS voltage

100

1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length (SEE FIG.1)

I (AV)

1.0

Amps

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

IFSM

Amps

Volts

Maximum instantaneous forward voltage at 1.0 A

1.0

1.25

1.7

TA=25^oC

Maximum DC reverse current

TA=125^oC

TA=150^oC

at rated DC blocking voltage

Maximum reverse recovery time (NOTE 1)

Typical junction capacitance (NOTE 2)

trr

Typical thermal resistance (NOTE 3)

^oC / W

^oC

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

-55 to +150

NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.

Zowie Technology Corporation

REV. : 0

中文翻译

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与EGP10D相关器件

型号	品牌	获取价格	描述	数据表
EGP10D.TR	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
EGP10D/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/64	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/74	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/92	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10D_15	LRC	获取价格	Plastic package has Underwriters Laboratory
EGP10D-5410/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL
EGP10D-A	MCC	获取价格	Rectifier Diode,

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