Datasheet > EGP10D

EGP10D

更新时间： 2024-02-19 08:42:27

品牌	Logo	应用领域
JINANJINGHENG		二极管局域网
页数	文件大小	规格书
2页	84K
描述
SUPER FAST RECTIFIER

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

EGP10D 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

EGP10D 数据手册

EGP10ATHRU EGP10M

SUPER FAST RECTIFIER

Reverse Voltage: 50 to 1000 Volts

Forward Current:1.0Ampere

S E M I C O N D U C T O R

DO-41

FEATURES

GPRC( Glass Passivated Rectifier Chip) inside

Glass passivated cavity-free junction

Low forward voltage drop,High current capability

High surge current capability

1.0(25.4)

MIN

Super fast recovery time

0.107(2.7)

0.080(2.0)

DIA

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.205(5.20)

0.180(4.10)

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

1.0(25.4)

MIN

0.034(0.85)

0.028(0.71)

DIA

Weight: 0.012ounce, 0.34 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive

load. For capacitive load,derate current by 20%.)

EGP

10G

EGP

10A

EGP

10B

EGP

10D

EGP

10F

EGP

10J

EGP

10K

EGP

10M

Symbols

Units

600

280

600

100

150

105

150

200

140

200

400

280

400

800

280

800

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

1000

280

Volts

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

0.375"(9.5mm)lead Length at Ta=55 C

1.0

I(AV)

IFSM

Amp

Amps

Volts

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

30.0

Maximum Instantaneous Forward Voltage

at 1.0 A

0.95

1.25

5.0

TA=25 C

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

TA=100 C

Maximum Reverse Recovery Time(Note1)

Typical Junction Capacitance(Note2)

Trr

-65 to+125

-65 to+150

Operating Junction and Storage Temperature

Range

TSTG

Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.

2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.

8-4

NO.51 HEPING ROAD PR CHINA

TEL:86-531-6943657 FAX:86-531-6947096

WWW.JIFUSEMICON.COM

JINAN JINGHENG CO., LTD.

下载PDF

与EGP10D相关器件

型号	品牌	描述	获取价格	数据表
EGP10D.TR	FAIRCHILD	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,	获取价格
EGP10D/4H	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
EGP10D/64	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
EGP10D/65	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
EGP10D/74	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
EGP10D/92	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格