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EGP10D PDF预览

EGP10D

更新时间: 2024-11-25 06:56:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管高效整流二极管局域网
页数 文件大小 规格书
3页 39K
描述
1.0 Ampere Glass Passivated High Efficiency Rectifiers

EGP10D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:2.5 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EGP10D 数据手册

 浏览型号EGP10D的Datasheet PDF文件第2页浏览型号EGP10D的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
EGP10A - EGP10K  
Features  
1.0 min (25.4)  
Superfast recovery time for high  
efficiency.  
Dimensions in  
inches (mm)  
0.205 (5.21)  
0.160 (4.06)  
Low forward voltage, high current  
capability.  
Low leakage current.  
DO-41  
0.107 (2.72)  
0.080 (2.03)  
COLOR BAND DENOTES CATHODE  
High surge current capability.  
0.034 (0.86)  
0.028 (0.71)  
1.0 Ampere Glass Passivated High Efficiency Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
1.0  
A
.375 " lead length @ T = 55 C  
°
L
Peak Forward Surge Current  
if(surge)  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
30  
A
PD  
2.5  
17  
50  
W
mW/ C  
°
C/W  
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient  
Rθ  
°
JA  
Storage Temperature Range  
-65 to +150  
-65 to +150  
C
C
°
Tstg  
TJ  
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
10A  
10B  
100  
70  
10C  
150  
105  
150  
10D  
10F  
300  
210  
300  
10G  
400  
280  
400  
10J  
600  
420  
600  
10K  
800  
560  
800  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
200  
140  
200  
V
V
V
100  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Current  
5.0  
100  
A
A
µ
µ
@ rated VR  
TA = 25°C  
T = 125 C  
°
A
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Maximum Forward Voltage @ 1.0 A  
50  
75  
nS  
0.95  
22  
1.25  
1.7  
V
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
15  
pF  
EPG10A - EPG10K, Rev. A  
1999 Fairchild Semiconductor Corporation  

EGP10D 替代型号

型号 品牌 替代类型 描述 数据表
EGP10D-E3/54 VISHAY

类似代替

Glass Passivated Ultrafast Rectifier
1N4003-TP MCC

功能相似

1 Amp Rectifier 50 - 1000 Volts
1N4003G ONSEMI

功能相似

Axial Lead Standard Recovery Rectifiers

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