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EFA018A-70 PDF预览

EFA018A-70

更新时间: 2024-09-25 06:56:11
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
2页 23K
描述
Low Distortion GaAs Power FET

EFA018A-70 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84

EFA018A-70 数据手册

 浏览型号EFA018A-70的Datasheet PDF文件第2页 
EFA018A-70  
Excelics  
DATA SHEET  
Low Distortion GaAs Power FET  
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE  
+18.5dBm TYPICAL OUTPUT POWER  
10.5dB TYPICAL POWER GAIN AT 12GHz  
TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED  
GAIN AT 12GHz  
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
44  
19  
4
20  
D
G
S
S
All Dimensions In mils.  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN TYP MAX UNIT  
Output Power at 1dB Compression  
Vds=6V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=6V, Ids=50% Idss  
Power Added Efficiency at 1dB Compression  
Vds=6V, Ids=50% Idss  
Noise Figure  
Vds=2V, Ids=15mA  
Associated Gain  
Vds=2V, Ids=15mA  
f=12GHz  
16.5  
18.5  
18.5  
10.5  
8.0  
P1dB  
dBm  
dB  
%
f=18GHz  
f=12GHz  
f=18GHz  
9.0  
G1dB  
PAE  
NF  
f=12GHz  
f=12GHz  
33  
1.1  
dB  
dB  
f=12GHz  
10.5  
Ga  
Idss  
Gm  
Saturated Drain Current Vds=3V, Vgs=0V  
25  
20  
50  
30  
80  
mA  
mS  
V
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
Vds=3V, Ids=1.0 mA  
Vp  
-2.0  
-15  
-14  
480*  
-3.5  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage Igd=0.5mA  
Source Breakdown Voltage Igs=0.5mA  
Thermal Resistance  
-10  
-6  
V
V
oC/W  
* Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
ABSOLUTE1  
10V  
CONTINUOUS2  
6V  
Vds  
Vgs  
Ids  
-6V  
-4V  
Idss  
40mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
4mA  
0.7mA  
17dBm  
175oC  
-65/175oC  
@ 3dB Compression  
150 oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
-65/150 oC  
285mW  
240mW  
Note: 1 Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  

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