DSEI2X30-10P

更新时间： 2024-11-05 13:07:27

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	102K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DSEI2X30-10P 数据手册

DSEI 2x 30 I_FAVM= 2x 30 A

DSEI 2x 31 V_RRM= 1000 V

Fast Recovery

Epitaxial Diode (FRED)

t_rr

= 35 ns

miniBLOC, SOT-227 B

E72873

V_RSM

V_RRM

Type

1000

1000 DSEI 2x 30-10B DSEI 2x 31-10B

DSEI 2x30

DSEI 2x31

Symbol

I_FRMS

Test Conditions

Maximum Ratings (per diode)

T_VJ= T_VJM

Features

I_FAVM

I_FRM

①

T_C= 50°C; rectangular, d = 0.5

t_P< 10 ms; rep. rating, pulse width limited by T_VJM

①

375

International standard package

miniBLOC (ISOTOP compatible)

Isolation voltage 2500 V~

2 independent FRED in 1 package

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I_RM-values

Soft recovery behaviour

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

200

210

①

t = 8.3 ms (60 Hz), sine

①

T_VJ= 150°C; t = 10 ms (50 Hz), sine

185

195

①

t = 8.3 ms (60 Hz), sine

①

I²t

T_VJ= 45°C

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

200

180

A²s

①

T_VJ= 150°C; t = 10 ms (50 Hz), sine

170

160

A²s

t = 8.3 ms (60 Hz), sine

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+150

°C

Applications

①

Antiparallel diode for high frequency

switching devices

Anti saturation diode

Snubber diode

Free wheeling diode in converters

P_tot

T_C= 25°C

100

①

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

2500

①

and motor control circuits

Rectifiers in switch mode power

M_d

Mounting torque

Terminal connection torque (M4)

1.5/13

Nm/lb.in.

①

supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

Weight

Symbol

①

Test Conditions

Characteristic Values (per diode)

①

typ.

max.

I_R

T_VJ= 25°C

T_VJ= 125°C V_R= 0.8 • V_RRM

V_R= V_RRM

V_R= 0.8 • V_RRM

750

250

Advantages

①

High reliability circuit operation

Low voltage peaks for reduced

V_F

I_F= 30 A;

T_VJ= 150°C

T_VJ= 25°C

2.4

①

protection circuits

Low noise switching

Low losses

Operating at lower temperature or

①

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

1.5

12.5

①

R_thJC

R_thCK

1.25

K/W

space saving by reduced cooling

0.05

t_rr

I_F= 1 A; -di/dt = 100 A/ms; V_R= 30 V; T_VJ= 25°C

I_RM

V_R= 540 V; I_F= 30 A; -di_F/dt = 240 A/ms

L £ 0.05 mH; T_VJ= 100°C

① I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.8 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

中文翻译

下载PDF

与DSEI2X30-10P相关器件

型号	品牌	获取价格	描述	数据表
DSEI2X30-12B	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X30-12B	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X30-12P	IXYS	获取价格	暂无描述
DSEI2X31	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-04C	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 400V V(RRM), Silicon, MINIBLOC-4
DSEI2X31-04C	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-05C	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 500V V(RRM), Silicon,
DSEI2X31-06B	ETC	获取价格	ARRAY OF INDEPENDENT DIODES\|SOT-227B
DSEI2X31-06C	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-06C	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

与DSEI2X30-10P相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

DSEI2X30-10P

DSEI2X30-10P 数据手册

与DSEI2X30-10P相关器件

与DSEI2X30-10P相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DSEI2X30-10P

DSEI2X30-10P 数据手册

与DSEI2X30-10P相关器件

与DSEI2X30-10P相关文章

您还可以找

您在本页遇到什么问题？