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DSEI2X31-12B PDF预览

DSEI2X31-12B

更新时间: 2023-12-06 20:13:08
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 559K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEI2X31-12B 数据手册

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DSEI2x31-12B  
=
VRRM  
IFAV  
trr  
1200V  
30A  
FRED  
= 2x  
=
50ns  
Fast Recovery Epitaxial Diode  
Low Loss and Soft Recovery  
Parallel legs  
Part number  
DSEI2x31-12B  
Backside: isolated  
2
3
1
4
SOT-227B (minibloc)  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Low leakage current  
Very short recovery time  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
3000  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Epoxy meets UL 94V-0  
Base plate: Copper  
internally DCB isolated  
Advanced power cycling  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20210721c  
© 2021 IXYS all rights reserved  

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