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DSEI30-06A PDF预览

DSEI30-06A

更新时间: 2024-11-06 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 344K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEI30-06A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-247AD, 2 PINReach Compliance Code:compliant
风险等级:1.66其他特性:HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE, SNUBBER DIODE
应用:FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:37 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:125 W
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEI30-06A 数据手册

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DSEI30-06A  
=
VRRM  
IFAV  
trr  
600V  
30A  
FRED  
=
=
35ns  
Fast Recovery Epitaxial Diode  
Single Diode  
Part number  
DSEI30-06A  
Backside: cathode  
3
1
TO-247  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Low leakage current  
Antiparallel diode for high frequency  
switching devices  
Industry standard outline  
RoHS compliant  
Very short recovery time  
Antisaturation diode  
Epoxy meets UL 94V-0  
Improved thermal behaviour  
Very low Irm-values  
Snubber diode  
Free wheeling diode  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20201009b  
© 2020 IXYS all rights reserved  

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