5秒后页面跳转
DSEI2X61-02A PDF预览

DSEI2X61-02A

更新时间: 2024-11-17 22:12:35
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 67K
描述
Fast Recovery Epitaxial Diode (FRED)

DSEI2X61-02A 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:R-PUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4
其他特性:SNUBBER DIODE, FREE WHEELING DIODE, HIGH RELIABILITY应用:FAST RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.08 VJESD-30 代码:R-PUFM-X4
最大非重复峰值正向电流:950 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:71 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:150 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向电流:50 µA最大反向恢复时间:0.035 µs
反向测试电压:200 V子类别:Other Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEI2X61-02A 数据手册

 浏览型号DSEI2X61-02A的Datasheet PDF文件第2页 
DSEI 2x 61 IFAVM = 2x 71 A  
VRRM = 200 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 35 ns  
miniBLOC, SOT-227 B  
E72873  
VRSM  
V
VRRM  
V
Type  
200  
200  
DSEI 2x 61-02A  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings (per diode)  
TVJ = TVJM  
100  
71  
A
A
A
Features  
IFAVM  
IFRM  
TC = 85°C; rectangular, d = 0.5  
tP < 10 ms; rep. rating, pulse width limited by TVJM  
800  
International standard package  
miniBLOC (ISOTOP compatible)  
Isolation voltage 2500 V~  
2 independent FRED in 1 package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
950  
1020  
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
800  
870  
A
A
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
4500  
4300  
A2s  
A2s  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
3200  
3140  
A2s  
A2s  
Applications  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Antiparallel diode for high frequency  
switching devices  
Anti saturation diode  
Snubber diode  
Free wheeling diode in converters  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating and melting  
Ptot  
VISOL  
Md  
TC = 25°C  
150  
W
50/60 Hz, RMS IISOL £ 1 mA  
2500  
V~  
Mounting torque  
Terminal connection torque (M4)  
1.1-1.5/9-13  
1.1-1.5/9-13  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
Symbol  
IR  
Test Conditions  
Characteristic Values (per diode)  
typ.  
max.  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
50  
40  
11  
µA  
µA  
mA  
Advantages  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Low noise switching  
Low losses  
Operating at lower temperature or  
VF  
IF = 60 A;  
TVJ =150°C  
TVJ = 25°C  
0.88  
1.08  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.7  
3.0  
V
mW  
space saving by reduced cooling  
RthJC  
RthCK  
0.8  
K/W  
K/W  
0.05  
trr  
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C  
35  
8
50  
10  
ns  
A
IRM  
VR = 100 V; IF = 60 A; -diF/dt = 200 A/µs  
L £ 0.05 mH; TVJ = 100°C  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 2  

与DSEI2X61-02A相关器件

型号 品牌 获取价格 描述 数据表
DSEI2X61-04C LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X61-05C IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 60A, 500V V(RRM), Silicon,
DSEI2X61-06B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X61-06C IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X61-06C LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X61-06P IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 60A, 600V V(RRM), Silicon, ECOPAC-8
DSEI2X61-06P LITTELFUSE

获取价格

快速双二极管系列提供各种封装和高达1200V的击穿电压。 利用FRED芯片实现快速反向恢复
DSEI2X61-08B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X61-10B LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X61-10P IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)