Datasheet > DSEI30

DSEI30

更新时间： 2024-11-04 22:22:07

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	82K
描述
Fast Recovery Epitaxial Diode (FRED)

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中文翻译

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数据手册

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DSEI30 数据手册

DSEI 30 I_FAVM= 37 A

V_RRM= 600 V

Fast Recovery

Epitaxial Diode (FRED)

t_rr

= 35 ns

TO-247 AD

V_RSM

V_RRM

Type

640

600

DSEI 30-06A

A = Anode, C = Cathode

Symbol

I_FRMS

Test Conditions

Maximum Ratings

Features

①

International standard package

JEDEC TO-247 AD

T_VJ= T_VJM

375

I_FAVM

I_FRM

①

T_C= 85°C; rectangular, d = 0.5

t_P< 10 ms; rep. rating, pulse width limited by T_VJM

①

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I_RM-values

Soft recovery behaviour

Epoxy meets UL 94V-0

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

300

320

t = 8.3 ms (60 Hz), sine

T_VJ= 150°C; t = 10 ms (50 Hz), sine

260

280

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

450

420

A²s

Applications

T_VJ= 150°C; t = 10 ms (50 Hz), sine

340

320

A²s

t = 8.3 ms (60 Hz), sine

①

Antiparallel diode for high frequency

switching devices

Anti saturation diode

Snubber diode

Free wheeling diode in converters

and motor control circuits

Rectifiers in switch mode power

supplies (SMPS)

Inductive heating and melting

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+150

°C

①

P_tot

M_d

T_C= 25°C

125

0.8...1.2

①

Mounting torque

Weight

Symbol

I_R

①

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

①

Test Conditions

Characteristic Values

max.

typ.

Advantages

T_VJ= 25°C

T_VJ= 125°C V_R= 0.8 • V_RRM

V_R= V_RRM

V_R= 0.8 • V_RRM

100

①

High reliability circuit operation

Low voltage peaks for reduced

protection circuits

Low noise switching

Low losses

Operating at lower temperature or

space saving by reduced cooling

①

V_F

I_F= 37 A;

T_VJ= 150°C

T_VJ= 25°C

1.4

1.6

①

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

1.01

7.1

①

R_thJC

R_thCK

R_thJA

K/W

0.25

t_rr

I_F= 1 A; -di/dt = 100 A/ms; V_R= 30 V; T_VJ= 25°C

I_RM

V_R= 350 V; I_F= 30 A; -di_F/dt = 240 A/ms

L £ 0.05 mH; T_VJ= 100°C

① I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.8 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

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与DSEI30相关器件

型号	品牌	获取价格	描述	数据表
DSEI30-04A	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 37A, 400V V(RRM), Silicon,
DSEI30-05A	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 37A, 500V V(RRM), Silicon,
DSEI30-06A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI30-06A	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI30-06AS	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 37A, 600V V(RRM), Silicon, TO-247AD, TO-247AD, 2 PIN
DSEI30-08A	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon,
DSEI30-10A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI30-10A	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-247AD, TO-247AD, 2 PIN
DSEI30-10AR	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, ISOPLUS247, 2 PIN
DSEI30-12A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)

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