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DSEI2X61-12P PDF预览

DSEI2X61-12P

更新时间: 2024-11-05 20:08:11
品牌 Logo 应用领域
IXYS 快速恢复二极管局域网
页数 文件大小 规格书
2页 139K
描述
Rectifier Diode, 1 Phase, 2 Element, 52A, 1200V V(RRM), Silicon, ECOPAC-8

DSEI2X61-12P 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:R-XUFM-X8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.32
其他特性:SNUBBER DIODE, FREE WHEELING DIODE, LOW NOISE应用:FAST RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUFM-X8最大非重复峰值正向电流:450 A
元件数量:2相数:1
端子数量:8最大输出电流:52 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.04 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEI2X61-12P 数据手册

 浏览型号DSEI2X61-12P的Datasheet PDF文件第2页 
DSEI 2x61 IFAVM = 2x52 A  
VRRM = 1200 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 40 ns  
VRSM  
V
VRRM  
V
Type  
1200  
1200  
DSEI 2x 61-12P  
D5  
Symbol  
IFRMS  
Conditions  
Maximum Ratings (per diode)  
Features  
• 2 independent FRED in 1 package  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Leads suitable for PC board soldering  
• Very short recovery time  
TVJ = TVJM  
100  
52  
700  
A
A
A
IFAVM  
IFRM  
TC = 50°C; rectangular; d = 0.5  
tP < 10 µs; rep. rating; pulse width limited by TVJM  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
450  
A
• Soft recovery behaviour  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Applications  
Antiparallel diode for high frequency  
switching devices  
Ptot  
TC = 25°C  
180  
W
Anti saturation diode  
Snubber diode  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Inductive heating and melting  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Md  
Mounting torque (M4)  
1.5 - 2.0  
14 - 18  
Nm  
lb.in.  
Weight  
Symbol  
18  
g
Conditions  
Characteristic Values (per diode)  
typ.  
max.  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 25°C VR = 0.8 • VRRM  
TVJ = 125°C VR = 0.8 • VRRM  
2.2  
0.5  
14  
mA  
mA  
mA  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VF  
IF = 60 A;  
TVJ = 150°C  
TVJ = 25°C  
2.15  
2.50  
V
V
• Low noise switching  
• Small and light weight  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.65  
8.3  
V
mΩ  
RthJC  
RthCK  
0.7  
0.05  
K/W  
K/W  
trr  
IF = 1 A; -di/dt = 200 A/µs  
VR = 30 V; TVJ = 25°C  
40  
60  
36  
ns  
IRM  
VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs  
32  
A
L 0.05 µH; TVJ = 100°C  
dS  
dA  
a
Creeping distance on surface  
Creeping distance in air  
Allowable acceleration  
min. 11.2  
min. 11.2  
max. 50  
mm  
mm  
m/s²  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2001 IXYS All rights reserved  
1 - 2  

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