5秒后页面跳转
DSEI2X30-12B PDF预览

DSEI2X30-12B

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 559K
描述
FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEI2X30-12B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PUFM-X4Reach Compliance Code:compliant
风险等级:5.18其他特性:SNUBBER DIODE, FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.2 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:28 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:100 W认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.04 µs
子类别:Other Diodes表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEI2X30-12B 数据手册

 浏览型号DSEI2X30-12B的Datasheet PDF文件第2页浏览型号DSEI2X30-12B的Datasheet PDF文件第3页浏览型号DSEI2X30-12B的Datasheet PDF文件第4页浏览型号DSEI2X30-12B的Datasheet PDF文件第5页 
DSEI2x30-12B  
=
VRRM  
IFAV  
trr  
1200V  
30A  
FRED  
= 2x  
=
50ns  
Fast Recovery Epitaxial Diode  
Low Loss and Soft Recovery  
Anti-parallel legs  
Part number  
DSEI2x30-12B  
Backside: isolated  
2
1
3
4
SOT-227B (minibloc)  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Low leakage current  
Very short recovery time  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
3000  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Epoxy meets UL 94V-0  
Base plate: Copper  
internally DCB isolated  
Advanced power cycling  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20210721c  
© 2021 IXYS all rights reserved  

与DSEI2X30-12B相关器件

型号 品牌 获取价格 描述 数据表
DSEI2X30-12P IXYS

获取价格

暂无描述
DSEI2X31 IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-04C IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 30A, 400V V(RRM), Silicon, MINIBLOC-4
DSEI2X31-04C LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-05C IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 30A, 500V V(RRM), Silicon,
DSEI2X31-06B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X31-06C IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-06C LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-08B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X31-10B IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)