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DSEI2X31-10P PDF预览

DSEI2X31-10P

更新时间: 2024-11-18 12:53:19
品牌 Logo 应用领域
IXYS 整流二极管测试局域网快速恢复二极管
页数 文件大小 规格书
2页 141K
描述
Fast Recovery Epitaxial Diode (FRED)

DSEI2X31-10P 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-XUFM-X8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75Is Samacsys:N
其他特性:LOW NOISE, FREE WHEELING DIODE, SNUBBER DIODE应用:FAST RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2 VJESD-30 代码:R-XUFM-X8
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:8
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:30 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:100 W
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向电流:7000 µA最大反向恢复时间:0.05 µs
反向测试电压:800 V子类别:Other Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEI2X31-10P 数据手册

 浏览型号DSEI2X31-10P的Datasheet PDF文件第2页 
DSEI 2x31-10P  
IFAVM = 2x30 A  
VRRM = 1000 V  
trr = 35 ns  
Fast Recovery  
Epitaxial Diode (FRED)  
VRSM  
V
VRRM  
V
Type  
1000  
1000  
DSEI 2x 31-10P  
D5  
Symbol  
IFRMS  
Conditions  
Maximum Ratings (per diode)  
Features  
• 2 independent FRED in 1 package  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Leads suitable for PC board soldering  
• Very short recovery time  
TVJ = TVJM  
70  
30  
375  
A
A
A
IFAVM  
IFRM  
TC = 50°C; rectangular; d = 0.5  
tP < 10 µs; rep. rating; pulse width limited by TVJM  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
200  
A
• Soft recovery behaviour  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Applications  
• Antiparallel diode for high frequency  
switching devices  
Ptot  
TC = 25°C  
100  
W
• Anti saturation diode  
• Snubber diode  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Inductive heating and melting  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Md  
Mounting torque (M4)  
1.5 - 2.0  
14 - 18  
Nm  
lb.in.  
Weight  
Symbol  
18  
g
Conditions  
Characteristic Values (per diode)  
typ.  
max.  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
VJ = 25°C VR = 0.8 • VRRM  
TVJ = 125°C VR = 0.8 • VRRM  
750  
250  
7
µA  
µA  
mA  
T
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
2.0  
2.4  
V
V
• Low noise switching  
• Small and light weight  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.5  
12.5  
V
mΩ  
RthJC  
RthCK  
1.25  
50  
K/W  
K/W  
0.05  
trr  
IF = 1 A; -di/dt = 100 A/µs  
35  
ns  
VR = 30 V; TVJ = 25°C  
IRM  
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs  
16  
18  
A
L 0.05 µH; TVJ = 100°C  
dS  
dA  
a
Creeping distance on surface  
Creeping distance in air  
Allowable acceleration  
min. 11.2  
min. 11.2  
max. 50  
mm  
mm  
m/s²  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
20070731a  
© 2007 IXYS All rights reserved  
1 - 2  

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ARRAY OF INDEPENDENT DIODES|SOT-227B