5秒后页面跳转
DSEI2X31-04C PDF预览

DSEI2X31-04C

更新时间: 2024-09-30 20:31:11
品牌 Logo 应用领域
IXYS 快速恢复二极管局域网测试
页数 文件大小 规格书
3页 152K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 400V V(RRM), Silicon, MINIBLOC-4

DSEI2X31-04C 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:R-PUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.03
Is Samacsys:N其他特性:HIGH RELIABILITY, LOW NOISE, FREEWHEELING, SNUBBER DIODE
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:100 W认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向电流:250 µA
最大反向恢复时间:0.035 µs反向测试电压:320 V
子类别:Other Diodes表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEI2X31-04C 数据手册

 浏览型号DSEI2X31-04C的Datasheet PDF文件第2页浏览型号DSEI2X31-04C的Datasheet PDF文件第3页 
DSEI 2x30-04/06  
DSEI 2x31-04/06  
IFAVM = 2x 30 A  
VRRM = 400/600 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
=
35 ns  
VRSM  
V
VRRM  
V
Type  
miniBLOC, SOT-227 B  
440  
640  
400  
600  
DSEI 2x 30-04C DSEI 2x 31-04C  
DSEI 2x 30-06C DSEI 2x 31-06C  
DSEI 2x 30  
DSEI 2x 31  
E72873  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings (per diode)  
TVJ = TVJM  
TC = 85°C; rectangular, d = 0.5  
tP < 10 µs; rep. rating, pulse width limited by TVJM  
70  
30  
A
A
A
Features  
IFAVM  
IFRM  
375  
International standard package  
miniBLOC (ISOTOP compatible)  
Isolation voltage 2500 V~  
2 independent FRED in 1 package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
300  
320  
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
260  
280  
A
A
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
450  
420  
A2s  
A2s  
Soft recovery behaviour  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
340  
320  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Applications  
Antiparallel diode for high frequency  
switching devices  
Ptot  
TC = 25°C  
100  
W
Anti saturation diode  
Snubber diode  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
2500  
V~  
Free wheeling diode in converters  
and motor control circuits  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13  
1.5/13  
Nm/lb.in.  
Nm/lb.in.  
Rectifiers in switch mode power  
supplies (SMPS)  
Weight  
Symbol  
30  
g
Inductive heating and melting  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
Test Conditions  
Characteristic Values (per diode)  
max.  
typ.  
IR  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
100  
50  
7
µA  
µA  
Advantages  
mA  
High reliability circuit operation  
Low voltage peaks for reduced  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
1.4  
1.6  
V
V
protection circuits  
Low noise switching  
Low losses  
Operating at lower temperature or  
space saving by reduced cooling  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.01  
7.1  
V
mΩ  
RthJC  
RthCK  
1.25  
K/W  
K/W  
0.05  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C  
35  
10  
50  
11  
ns  
A
IRM  
VR = 350 V; IF = 30 A; -diF/dt = 240 A/µs  
L 0.05 µH; TVJ = 100°C  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2017 IXYS All rights reserved  
20170315a  
1 - 3  

与DSEI2X31-04C相关器件

型号 品牌 获取价格 描述 数据表
DSEI2X31-05C IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 30A, 500V V(RRM), Silicon,
DSEI2X31-06B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X31-06C IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-06C LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-08B ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X31-10B IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-10B LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-10P IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-12B IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-12B LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。