DSEI2X30-12P

更新时间： 2024-02-17 20:21:22

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	170K
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中文翻译

获取价格

数据手册

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DSEI2X30-12P 数据手册

DSEI 2x30 I_FAVM= 2x30 A

DSEI 2x31 V_RRM= 600 V

t_rr= 35 ns

Fast Recovery

Epitaxial Diode (FRED)

V_RSM

V_RRM

Type

600

DSEI 2x 30-06P

DSEI 2x 31-06P

2x 30

2x31

Symbol

I_FRMS

Conditions

Maximum Ratings (per diode)

Features

• 2 independent FRED in 1 package

• Isolation voltage 3000 V~

• Planar passivated chips

• Leads suitable for PC board soldering

• Very short recovery time

T_VJ= T_VJM

375

I_FAVM

I_FRM

①

T_C= 85°C; rectangular; d = 0.5

t_P< 10 µs; rep. rating; pulse width limited by T_VJM

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

300

• Soft recovery behaviour

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+150

°C

Applications

• Antiparallel diode for high frequency

switching devices

P_tot

T_C= 25°C

100

• Anti saturation diode

• Snubber diode

V_ISOL

50/60 Hz, RMS

I_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating and melting

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

M_d

Mounting torque (M4)

1.5 - 2.0

14 - 18

lb.in.

Weight

Symbol

Conditions

Characteristic Values (per diode)

typ.

max.

Advantages

I_R

T_VJ= 25°C V_R= V_RRM

T_VJ= 25°C V_R= 0.8 • V_RRM

T_VJ= 125°C V_R= 0.8 • V_RRM

100

µA

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power

cycling capability

V_F

I_F= 30 A;

T_VJ= 150°C

T_VJ= 25°C

1.4

1.6

• Low noise switching

• Small and light weight

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

1.01

7.1

mΩ

R_thJC

R_thCK

1.25

K/W

0.05

t_rr

I_F= 1 A; -di/dt = 100 A/µs

V_R= 30 V; T_VJ= 25°C

I_RM

V_R= 350 V; I_F= 30 A; -di_F/dt = 240 A/µs

L ≤ 0.05 µH; T_VJ= 100°C

d_S

d_A

Creeping distance on surface

Creeping distance in air

Allowable acceleration

min. 11.2

max. 50

m/s²

① I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.8 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

中文翻译

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与DSEI2X30-12P相关器件

型号	品牌	获取价格	描述	数据表
DSEI2X31	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-04C	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 400V V(RRM), Silicon, MINIBLOC-4
DSEI2X31-04C	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-05C	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 500V V(RRM), Silicon,
DSEI2X31-06B	ETC	获取价格	ARRAY OF INDEPENDENT DIODES\|SOT-227B
DSEI2X31-06C	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-06C	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X31-08B	ETC	获取价格	ARRAY OF INDEPENDENT DIODES\|SOT-227B
DSEI2X31-10B	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI2X31-10B	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

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