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DN2530N3 PDF预览

DN2530N3

更新时间： 2024-09-14 22:40:35
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
4页 88K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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中文翻译

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DN2530N3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-W3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.24Is Samacsys：N
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：300 V最大漏极电流 (ID)：0.175 A
最大漏源导通电阻：12 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DN2530N3 数据手册

 浏览型号DN2530N3的Datasheet PDF文件第2页浏览型号DN2530N3的Datasheet PDF文件第3页浏览型号DN2530N3的Datasheet PDF文件第4页 
DN2530  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
Product marking for TO-243AA:  
BVDSX  
/
RDS(ON)  
(max)  
IDSS  
BVDGX  
(min)  
TO-92  
TO-243AA*  
DN5T❋  
300V  
12Ω  
200mA  
DN2530N3  
DN2530N8  
Where ❋ = 2-week alpha date code  
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.  
Advanced DMOS Technology  
Features  
Not recommended for new designs. Please use DN3535 or  
DN3545 instead.  
❏
❏
❏
❏
❏
❏
High input impedance  
Low input capacitance  
Fast switching speeds  
These depletion-mode (normally-on) transistors utilize an ad-  
vanced vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transis-  
tors and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Applications  
❏
❏
❏
❏
❏
❏
❏
Normally-on switches  
Solid state relays  
Converters  
Package Options  
Linear amplifiers  
Constant current sources  
Power supply circuits  
Telecom  
D
G
D
S
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSX  
BVDGX  
± 20V  
TO-243AA  
S G D  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
(SOT-89)  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
12/13/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

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