5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> DN2535N5
DN2535N5 PDF预览

DN2535N5

更新时间： 2024-11-05 22:40:35
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 91K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

DN2535N5 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.25
其他特性：LOW THRESHOLD外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：350 V
最大漏极电流 (ID)：0.5 A最大漏源导通电阻：25 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：5 pF
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：15 W最大功率耗散 (Abs)：15 W
最大脉冲漏极电流 (IDM)：0.5 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：35 ns最大开启时间（吨）：25 ns
Base Number Matches：1

DN2535N5 数据手册

 浏览型号DN2535N5的Datasheet PDF文件第2页浏览型号DN2535N5的Datasheet PDF文件第3页浏览型号DN2535N5的Datasheet PDF文件第4页 
DN2535  
DN2540  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSX  
/
RDS(ON)  
(max)  
IDSS  
BVDGX  
350V  
400V  
(min)  
150mA  
150mA  
TO-92  
TO-220  
TO-243AA*  
—
25Ω  
DN2535N3  
DN2535N5  
DN2540N5  
25Ω  
DN2540N3  
DN2540N8  
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.  
Product marking for TO-243AA:  
Features  
DN5D❋  
❏
❏
❏
❏
❏
❏
High input impedance  
Low input capacitance  
Fast switching speeds  
Where ❋ = 2-week alpha date code  
Advanced DMOS Technology  
Low on resistance  
Not recommended for new designs. For products in TO-92  
(N3)packageandTO-243AA(N8)package,pleaseuseDN3535  
or DN3545 instead.  
Free from secondary breakdown  
Low input and output leakage  
These low threshold depletion-mode (normally-on) transistors  
utilize an advanced vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This combina-  
tion produces devices with the power handling capabilities of  
bipolar transistors and with the high input impedance and posi-  
tivetemperaturecoefficientinherentinMOSdevices. Character-  
istic of all MOS structures, these devices are free from thermal  
runaway and thermally-induced secondary breakdown.  
Applications  
❏
❏
❏
❏
❏
❏
❏
Normally-on switches  
Solid state relays  
Converters  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Linear amplifiers  
Constant current sources  
Power supply circuits  
Telecom  
Package Options  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
D
BVDSX  
BVDGX  
± 20V  
G
D
S
G
D
S
Drain-to-Gate Voltage  
TO-220  
TAB: DRAIN  
S G D  
TO-243AA  
(SOT-89)  
Gate-to-Source Voltage  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
12/13/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

下载PDF

DN2535N5 替代型号

型号 品牌 替代类型 描述 数据表
DN2535N5-G SUPERTEX

类似代替

 N-Channel Depletion-Mode Vertical DMOS FETs

与DN2535N5相关器件

型号 品牌 获取价格 描述 数据表
DN2535N5-G SUPERTEX

获取价格

 		N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N8 SUPERTEX

获取价格

 		Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxi
DN2535N8-G SUPERTEX

获取价格

 		Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxi
DN2535ND ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | CHIP
DN2540 SUPERTEX

获取价格

 		N-Channel Depletion-Mode Vertical DMOS FETs
DN2540 MICROCHIP

获取价格

 		DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced v
DN2540_07 SUPERTEX

获取价格

 		N-Channel Depletion-Mode Vertical DMOS FETs
DN2540_13 SUPERTEX

获取价格

 		N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3 SUPERTEX

获取价格

 		N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3/N5/N8-G ETC

获取价格

 		高速高压MOSFET,用于开关信号上,低阀门电压,0.8V工作. TN系列,VN系列,TP

与DN2535N5相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证