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DN2540N3-GP003 PDF预览

DN2540N3-GP003

更新时间: 2024-11-06 14:41:47
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
8页 846K
描述
Small Signal Field-Effect Transistor, 0.12A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3

DN2540N3-GP003 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.62配置:SINGLE WITH BUILT-IN DIODE
最大漏极电流 (ID):0.12 A最大漏源导通电阻:25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DN2540N3-GP003 数据手册

 浏览型号DN2540N3-GP003的Datasheet PDF文件第2页浏览型号DN2540N3-GP003的Datasheet PDF文件第3页浏览型号DN2540N3-GP003的Datasheet PDF文件第4页浏览型号DN2540N3-GP003的Datasheet PDF文件第5页浏览型号DN2540N3-GP003的Datasheet PDF文件第6页浏览型号DN2540N3-GP003的Datasheet PDF文件第7页 
DN2540  
Supertex inc.  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Features  
General Description  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on-resistance  
The Supertex DN2540 is a low threshold depletion mode  
(normally-on) transistor utilizing an advanced vertical  
DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces a device  
with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all  
MOS structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
Free from secondary breakdown  
Low input and output leakage  
Applications  
Normally-on switches  
Solid state relays  
Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
Linear amplifiers  
Constant current sources  
Power supply circuits  
Telecom  
Product Summary  
Ordering Information  
RDS(ON)  
(max)  
25Ω  
IDSS  
(min)  
BVDSX/BVDGX  
Part Number  
Package Option  
Packing  
DN2540N3-G  
TO-92  
1000/Bag  
400V  
150mA  
DN2540N3-G P002  
DN2540N3-G P003  
DN2540N3-G P005  
DN2540N3-G P013  
DN2540N3-G P014  
DN2540N5-G  
Pin Configuration  
TO-92  
2000/Reel  
DRAIN  
DRAIN  
TO-220  
50/Tube  
SOURCE  
SOURCE  
TO-243AA (SOT-89)  
DN2540N8-G  
2000/Reel  
GATE  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
GATE  
TO-92  
DRAIN  
TO-220  
Absolute Maximum Ratings  
Parameter  
DRAIN  
Value  
BVDSX  
BVDGX  
±20V  
Drain-to-source voltage  
Drain-to-gate voltage  
SOURCE  
DRAIN  
GATE  
TO-243AA (SOT-89)  
Gate-to-source voltage  
Operating and storage  
temperature  
-55OC to +150OC  
Typical Thermal Resistance  
Package  
θja  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
TO-92  
132OC/W  
29OC/W  
133OC/W  
TO-220  
TO-243AA (SOT-89)  
Doc.# DSFP-DN2540  
B060313  
Supertex inc.  
www.supertex.com  

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