Datasheet > DN2540N8

DN2540N8

更新时间： 2024-02-27 05:32:11

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	91K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN2540N8 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	GREEN, N8, SAME AS SOT-89, 3 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	13 weeks
风险等级：	1.23	其他特性：	LOW THRESHOLD
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (ID)：	0.17 A	最大漏源导通电阻：	25 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-243AA
JESD-30 代码：	R-PSSO-F3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.6 W	最大脉冲漏极电流 (IDM)：	0.5 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
端子形式：	FLAT	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

DN2540N8 数据手册

DN2535

DN2540

N-Channel Depletion-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSX

R_DS(ON)

(max)

I_DSS

BV_DGX

350V

400V

(min)

150mA

TO-92

TO-220

TO-243AA*

—

25Ω

DN2535N3

DN2535N5

DN2540N5

25Ω

DN2540N3

DN2540N8

* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Product marking for TO-243AA:

Features

DN5D❋

❏

High input impedance

Low input capacitance

Fast switching speeds

Where ❋ = 2-week alpha date code

Advanced DMOS Technology

Low on resistance

Not recommended for new designs. For products in TO-92

(N3)packageandTO-243AA(N8)package,pleaseuseDN3535

or DN3545 instead.

Free from secondary breakdown

Low input and output leakage

These low threshold depletion-mode (normally-on) transistors

utilize an advanced vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This combina-

tion produces devices with the power handling capabilities of

bipolar transistors and with the high input impedance and posi-

tivetemperaturecoefficientinherentinMOSdevices. Character-

istic of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Applications

❏

Normally-on switches

Solid state relays

Converters

Supertex’sverticalDMOSFETsareideallysuitedtoawiderange

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Linear amplifiers

Constant current sources

Power supply circuits

Telecom

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSX

BV_DGX

± 20V

Drain-to-Gate Voltage

TO-220

TAB: DRAIN

S G D

TO-243AA

(SOT-89)

Gate-to-Source Voltage

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

12/13/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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与DN2540N8相关器件

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DN2540N8-G	SUPERTEX	N-Channel Depletion-Mode Vertical DMOS FETs	获取价格
DN2540ND	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| CHIP	获取价格
DN2620N3	SUPERTEX	Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Silicon, Metal-oxid	获取价格
DN2624	SUPERTEX	N-Channel Depletion-Mode Vertical DMOS FETs	获取价格
DN2624N3	SUPERTEX	N-Channel Depletion-Mode Vertical DMOS FETs	获取价格
DN2624N3P001	SUPERTEX	Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Silicon, Metal-oxid	获取价格

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