生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | HIGH INPUT IMPEDANCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最大漏极电流 (ID): | 0.3 A |
最大漏源导通电阻: | 4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DN2624N3P016 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Silicon, Metal-oxid | |
DN2624N3P017 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Silicon, Metal-oxid | |
DN2624N3P018 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.3A I(D), 1-Element, N-Channel, Silicon, Metal-oxid | |
DN2624ND | SUPERTEX |
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N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2625 | SUPERTEX |
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N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2625 | MICROCHIP |
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DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced ve | |
DN2625DK6-G | SUPERTEX |
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Power Field-Effect Transistor, 1.1A I(D), 250V, 3.5ohm, 1-Element, N-Channel, Silicon, Met | |
DN2625DK6-GM932 | MICROCHIP |
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POWER, FET | |
DN2625K4-G | SUPERTEX |
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N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2625K6-G | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode Vertical DMOS FETs |