Datasheet > DN2540_07

DN2540_07

更新时间： 2024-11-06 03:30:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
8页	814K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN2540_07 数据手册

DN2540

N-Channel Depletion-Mode

Vertical DMOS FETs

Features

General Description

The Supertex DN2540 is a low threshold depletion mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Normally-on switches

► Solid state relays

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Linear ampliﬁers

► Constant current sources

► Power supply circuits

► Telecom

Ordering Information

R_DS(ON)

max

(Ω)

I_DSS

min

(mA)

Package Options

BV_DSX/BV_DGX

Device

TO-92

TO-220

TO-243AA⁽¹⁾

(V)

DN2540

DN2540N3-G

DN2540N5-G

DN2540N8-G

400

150

-G indicates package is RoHS compliant (‘Green’)

(1) Same as SOT-89.

Pin Conﬁgurations

DRAIN

Absolute Maximum Ratings

Parameter

SOURCE

DRAIN

Value

BV_DSX

BV_DGX

20V

SOURCE

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

GATE

DRAIN

3-Lead TO-220 (N5)

3-Lead TO-92 (N3)

-55^OC to +150^OC

temperature

Soldering temperature*

300^OC

DRAIN

Absolute Maximum Ratings are those values beyond which damage to the

device may occur. Functional operation under these conditions is not implied.

Continuous operation of the device at the absolute rating level may affect

device reliability. All voltages are referenced to device ground.

SOURCE

DRAIN

GATE

3-Lead TO-243AA (N8)

*Distance of 1.6mm from case for 10 seconds.

12 3 4 5 6 7 8

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与DN2540_07相关器件

型号	品牌	获取价格	描述	数据表
DN2540_13	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3/N5/N8-G	ETC	获取价格	高速高压MOSFET,用于开关信号上,低阀门电压,0.8V工作. TN系列,VN系列,TP
DN2540N3-G	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3-GP002	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2540N3-GP003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN2540N3-GP005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN2540N3-GP013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN2540N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN2540N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 400V, 1-Element, N-Channel, Silicon, Met

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