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DN2535N3 PDF预览

DN2535N3

更新时间： 2024-02-24 15:31:09
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 91K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN2535N3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：7.83Is Samacsys：N
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：350 V最大漏极电流 (ID)：0.12 A
最大漏源导通电阻：25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DN2535N3 数据手册

 浏览型号DN2535N3的Datasheet PDF文件第2页浏览型号DN2535N3的Datasheet PDF文件第3页浏览型号DN2535N3的Datasheet PDF文件第4页 
DN2535  
DN2540  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSX  
/
RDS(ON)  
(max)  
IDSS  
BVDGX  
350V  
400V  
(min)  
150mA  
150mA  
TO-92  
TO-220  
TO-243AA*  
—
25Ω  
DN2535N3  
DN2535N5  
DN2540N5  
25Ω  
DN2540N3  
DN2540N8  
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.  
Product marking for TO-243AA:  
Features  
DN5D❋  
❏
❏
❏
❏
❏
❏
High input impedance  
Low input capacitance  
Fast switching speeds  
Where ❋ = 2-week alpha date code  
Advanced DMOS Technology  
Low on resistance  
Not recommended for new designs. For products in TO-92  
(N3)packageandTO-243AA(N8)package,pleaseuseDN3535  
or DN3545 instead.  
Free from secondary breakdown  
Low input and output leakage  
These low threshold depletion-mode (normally-on) transistors  
utilize an advanced vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This combina-  
tion produces devices with the power handling capabilities of  
bipolar transistors and with the high input impedance and posi-  
tivetemperaturecoefficientinherentinMOSdevices. Character-  
istic of all MOS structures, these devices are free from thermal  
runaway and thermally-induced secondary breakdown.  
Applications  
❏
❏
❏
❏
❏
❏
❏
Normally-on switches  
Solid state relays  
Converters  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Linear amplifiers  
Constant current sources  
Power supply circuits  
Telecom  
Package Options  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
D
BVDSX  
BVDGX  
± 20V  
G
D
S
G
D
S
Drain-to-Gate Voltage  
TO-220  
TAB: DRAIN  
S G D  
TO-243AA  
(SOT-89)  
Gate-to-Source Voltage  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
12/13/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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