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DN2535N3-GP013 PDF预览

DN2535N3-GP013

更新时间： 2024-02-22 05:36:02
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
6页 785K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN2535N3-GP013 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknown风险等级：5.61
配置：SINGLE WITH BUILT-IN DIODE最大漏极电流 (ID)：0.12 A
最大漏源导通电阻：25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DN2535N3-GP013 数据手册

 浏览型号DN2535N3-GP013的Datasheet PDF文件第2页浏览型号DN2535N3-GP013的Datasheet PDF文件第3页浏览型号DN2535N3-GP013的Datasheet PDF文件第4页浏览型号DN2535N3-GP013的Datasheet PDF文件第5页浏览型号DN2535N3-GP013的Datasheet PDF文件第6页 
Supertex inc.  
DN2535  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
General Description  
Features  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
The Supertex DN2535 is a low threshold depletion mode  
(normally-on) transistor utilizing an advanced vertical  
DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces a device  
with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all  
MOS structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
► Free from secondary breakdown  
► Low input and output leakage  
Applications  
► Normally-on switches  
► Solid state relays  
► Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
► Linear amplifiers  
► Constant current sources  
► Power supply circuits  
► Telecom  
Ordering Information  
Product Summary  
RDS(ON)  
(max)  
25Ω  
IDSS  
(min)  
Part Number  
Package Option  
Packing  
BVDSX/BVDGX  
DN2535N3-G  
TO-92  
1000/Bag  
350V  
150mA  
DN2535N3-G P002  
DN2535N3-G P003  
DN2535N3-G P005  
DN2535N3-G P013  
DN2535N3-G P014  
DN2535N5-G  
Pin Configuration  
TO-92  
2000/Reel  
50/Tube  
DRAIN  
TO-220  
DRAIN  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
SOURCE  
DRAIN  
SOURCE  
GATE  
Absolute Maximum Ratings  
Parameter  
GATE  
3-Lead TO-92  
3-Lead TO-220  
Value  
BVDSX  
BVDGX  
±20V  
Drain-to-source voltage  
Drain-to-gate voltage  
Product Marking  
SiDN  
2 5 3 5  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
= “Green” Packaging  
Gate-to-source voltage  
Operating and storage  
temperature  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
-55OC to +150OC  
Package may or may not include the following marks: Si or  
3-Lead TO-92  
L = Lot Number  
YY = Year Sealed  
DN2535N5  
WW = Week Sealed  
LLLLLLLLL  
YYWW  
= “Green” Packaging  
Typical Thermal Resistance  
Package  
Package may or may not include the following marks: Si or  
θja  
132OC/W  
29OC/W  
3-Lead TO-220  
TO-92  
TO-220  
Doc.# DSFP-DN2535  
B062813  
Supertex inc.  
www.supertex.com  
123456

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