是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
其他特性: | LOW THRESHOLD | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 350 V | 最大漏极电流 (ID): | 0.17 A |
最大漏源导通电阻: | 25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 1 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DN2535N3P015 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
DN2535N3P017 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.17A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
DN2535N3P018 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.17A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
DN2535N5 | SUPERTEX |
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N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2535N5-G | SUPERTEX |
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N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2535N8 | SUPERTEX |
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Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxi | |
DN2535N8-G | SUPERTEX |
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Power Field-Effect Transistor, 0.17A I(D), 25ohm, 1-Element, N-Channel, Silicon, Metal-oxi | |
DN2535ND | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | CHIP | |
DN2540 | SUPERTEX |
获取价格 |
N-Channel Depletion-Mode Vertical DMOS FETs | |
DN2540 | MICROCHIP |
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DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced v |