Datasheet > DN2535_07

DN2535_07

更新时间： 2024-11-09 03:30:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
6页	727K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN2535_07 数据手册

DN2535

N-Channel Depletion-Mode

Vertical DMOS FETs

Features

General Description

The Supertex DN2535 is a low threshold depletion mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Normally-on switches

► Solid state relays

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Linear ampliﬁers

► Constant current sources

► Power supply circuits

► Telecom

Ordering Information

Device

R_DS(ON)

I_DSS

Package Options

TO-92 TO-220

DN2535N3-G DN2535N5-G

BV_DSX/BV_DGX

max

min

(V)

(Ω)

(mA)

DN2535

350

150

-G indicates package is RoHS compliant (‘Green’)

(1) Same as SOT-89.

Pin Conﬁgurations

DRAIN

SOURCE

GATE

Absolute Maximum Ratings

Parameter

SOURCE

DRAIN

Value

BV_DSX

BV_DGX

20V

GATE

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

3-Lead TO-92 (N3)

3-Lead TO-220 (N5)

Product Marking

-55^OC to +150^OC

2535

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

temperature

Soldering temperature*

300^OC

Absolute Maximum Ratings are those values beyond which damage to the

device may occur. Functional operation under these conditions is not implied.

Continuous operation of the device at the absolute rating level may affect

device reliability. All voltages are referenced to device ground.

3-Lead TO-92 (N3)

L = Lot Number

YY = Year Sealed

WW = Week Sealed

DN2535N5

*Distance of 1.6mm from case for 10 seconds.

LLLLLLLLL

YYWW

= “Green” Packaging

3-Lead TO-220 (N5)

12 3 4 5 6

中文翻译

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与DN2535_07相关器件

型号	品牌	获取价格	描述	数据表
DN2535_13	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-G	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-GP002	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-GP003	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-GP005	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-GP013	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3-GP014	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN2535N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 350V, 1-Element, N-Channel, Silicon, Met
DN2535N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 350V, 1-Element, N-Channel, Silicon, Met

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