Datasheet > DMN16M0UCA6-7

DMN16M0UCA6-7

更新时间： 2024-09-23 19:44:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	459K
描述
Small Signal Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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DMN16M0UCA6-7 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	18 weeks	风险等级：	5.74
Base Number Matches：	1

DMN16M0UCA6-7 数据手册

DMN16M0UCA6

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



CSP with Footprint 2.11mm × 1.18mm

Height = 0.11mm for Low Profile

I_S

BV_SSS

R_{SS(ON) Max}

T_A= +25°C

ESD Protection of Gate

5.9mΩ @ V_GS= 4.5V

11.0mΩ @ V_GS= 2.5V

17A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

12V

12.5A

Description

Mechanical Data

This new generation MOSFET is designed to minimize the on-state

resistance (R_SS(ON)) yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.



Case: X4-DSN2112-6

Terminal Connections: See Diagram Below

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish — NiPdAu or NiAu. Solderable per MIL-STD-

202, Method 208

Applications



Battery Management

Load Switch

Battery Protection

X4-DSN2112-6

1. Source 1

2. Gate 1

3. Source 1

4. Source 2

5. Gate 2

Top View

ESD PROTECTED

Gate Protection

Diode

Gate Protection

Diode

6. Source 2

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN16M0UCA6-7

X4-DSN2112-6

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

MA = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: G = 2019)

M or M = Month (ex: 9 = September)

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 of 7

www.diodes.com

March 2019

DMN16M0UCA6

Document number: DS40941 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与DMN16M0UCA6-7相关器件

型号	品牌	获取价格	描述	数据表
DMN16M8UCA6	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN16M9UCA6	DIODES	获取价格	12V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2.4	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| CHIP
DMN2004DMK	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DMK_0711	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DMK-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK_0711	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWK-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004DWKQ-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Meta

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