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DMN2004DWKQ-7 PDF预览

DMN2004DWKQ-7

更新时间： 2024-01-21 10:09:19
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 434K
描述
Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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DMN2004DWKQ-7 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.25其他特性：HIGH RELIABILITY
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：0.54 A最大漏源导通电阻：0.55 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：20 pF
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
参考标准：AEC-Q101表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DMN2004DWKQ-7 数据手册

 浏览型号DMN2004DWKQ-7的Datasheet PDF文件第2页浏览型号DMN2004DWKQ-7的Datasheet PDF文件第3页浏览型号DMN2004DWKQ-7的Datasheet PDF文件第4页浏览型号DMN2004DWKQ-7的Datasheet PDF文件第5页浏览型号DMN2004DWKQ-7的Datasheet PDF文件第6页 
DMN2004DWKQ  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Dual N-Channel MOSFET  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
ID  
V(BR)DSS  
RDS(ON) max  
0.55Ω @ VGS = 4.5V  
TA = +25°C  
540mA  
20V  
Description  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making  
it ideal for high-efficiency power management applications.  
Mechanical Data  
Applications  
Case: SOT363  
Load Switch  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish  
- Matte Tin Annealed over Alloy 42  
e3  
Leadframe. Solderable per MIL-STD-202, Method 208  
Weight: 0.006 grams (Approximate)  
G1  
S1  
D2  
SOT363  
G2  
S2  
D1  
ESD PROTECTED TO 2kV  
Top View  
Top View  
Internal Schematic  
Ordering Information (Note 5)  
Part Number  
Case  
Packaging  
DMN2004DWKQ-7  
SOT363  
3,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
NAB = Product Type Marking Code  
YM = Date Code Marking  
Y or Y = Year (ex: A = 2013)  
M = Month (ex: 9 = September)  
NAB YM  
M Y B A N  
Date Code Key  
Year  
2006  
2007  
….  
2013  
2014  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
Code  
T
U
….  
A
B
C
D
E
F
G
H
I
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
February 2016  
© Diodes Incorporated  
DMN2004DWKQ  
Document number: DS38630 Rev. 1 - 2  
123456

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