Datasheet > DMN2005DLP4K

DMN2005DLP4K

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	238K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN2005DLP4K 数据手册

SPICE MODEL: DMN2005DLP4K

DMN2005DLP4K

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance

Very Low Gate Threshold Voltage, 0.9V Max.

Fast Switching Speed

D₁

DFN1310H4-6

Min Max

G₂

S₂

Dim

Typ

Low Input/Output Leakage

1.25 1.38 1.30

0.95 1.08 1.00

0.20 0.30 0.25

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

ESD Protected Gate

Ultra Low Profile Package

S₁

G₁

D₂

E**

0.10

0.20

Top View

Mechanical Data

0.40

•

Case: DFN1310H4-6

0.05 0.20

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating

94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish ⎯ NiPdAu annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Marking: See Page 4

Ordering & Date Code Information: See Page 4

0.10 0.20 0.15

0.30 0.50 0.40

Side View

•

M**

Z**

0.35

0.25

0.05

•

All Dimensions in mm

* Dimensions D, K, L, N Repeat 4X

** Dimensions E, M, Z Repeat 2X

ESD protected

Bottom View

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-Source Voltage

±10

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

200

250

I_D

Total Power Dissipation (Note 1)

P_d

350

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

357

°C/W

°C

R_θJA

-65 to +150

T , T_STG

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30801 Rev. 6 - 2

1 of 4

DMN2005DLP4K

www.diodes.com

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