5秒后页面跳转
DMN2005UFGQ PDF预览

DMN2005UFGQ

更新时间: 2024-11-26 14:53:23
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 556K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2005UFGQ 数据手册

 浏览型号DMN2005UFGQ的Datasheet PDF文件第2页浏览型号DMN2005UFGQ的Datasheet PDF文件第3页浏览型号DMN2005UFGQ的Datasheet PDF文件第4页浏览型号DMN2005UFGQ的Datasheet PDF文件第5页浏览型号DMN2005UFGQ的Datasheet PDF文件第6页浏览型号DMN2005UFGQ的Datasheet PDF文件第7页 
DMN2005UFGQ  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
PowerDI3333-8  
Product Summary  
Features and Benefits  
Low RDS(ON)Ensures On-State Losses are Minimized  
Small-Form Factor Thermally Efficient Package Enables Higher  
Density End Products  
ID Max  
TC = +25°C  
(Note 10)  
BVDSS  
RDS(ON) Max  
Occupies 33% of the Board Area Occupied by SO-8 Enabling  
Smaller End Product  
50A  
36A  
4.6m@ VGS = 4.5V  
8.7m@ VGS = 2.5V  
20V  
100% Unclamped Inductive Switching, Test in Production—  
Ensures More Reliable And Robust End Application  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Mechanical Data  
®
Case: PowerDI 3333-8  
Description and Applications  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections Indicator: See Diagram  
Terminals: FinishMatte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.072 grams (Approximate)  
This MOSFET is designed to meet the stringent requirements of  
automotive applications. It is qualified to AEC-Q101, supported by a  
PPAP, and is ideal for use in:  
Motor Control  
Load Switch  
DC-DC Converters  
PowerDI3333-8  
D
Pin 1  
S
S
S
G
G
D
D
D
D
S
Top View  
Bottom View  
Equivalent Circuit  
Ordering Information (Note 5)  
Part Number  
DMN2005UFGQ-7  
DMN2005UFGQ-13  
Case  
Packaging  
2000/Tape & Reel  
3000/Tape & Reel  
PowerDI3333-8  
PowerDI3333-8  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and  
Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.  
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
N05= Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last Two Digits of Year (ex: 19 = 2019)  
WW = Week Code (01 to 53)  
N05  
PowerDI is a registered trademark of Diodes Incorporated.  
1 of 7  
www.diodes.com  
March 2019  
© Diodes Incorporated  
DMN2005UFGQ  
Document number: DS41561 Rev. 4 - 2  

与DMN2005UFGQ相关器件

型号 品牌 获取价格 描述 数据表
DMN2005UPS DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2008LFU DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2008LFU-7 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMN2009LSS DIODES

获取价格

5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009LSS-13 DIODES

获取价格

5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009UCA4 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009UFDF DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009USS DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009USS-13 DIODES

获取价格

Power Field-Effect Transistor,
DMN2011UFDE DIODES

获取价格

Low Gate Threshold Voltage