Datasheet > DMN2009LSS

DMN2009LSS

更新时间： 2024-02-03 01:11:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	144K
描述
5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2009LSS 数据手册

DMN2009LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072 grams (approximate)

•

8mΩ @ V_GS= 10V

9mΩ @ V_GS= 4.5V

12mΩ @ V_GS= 2.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

SO-8

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

V_GSS

±12

_A= 25°C

Drain Current (Note 1)

Steady

State

9.6

I_D

T_A= 70°C

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

Unit

P_D

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

62.5

°C/W

°C

R_θ

-55 to +150

_J,T_STG

Notes:

1. Device mounted on 2 oz, FR-4 PCB, with R

= 62.5°C/W

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 5

www.diodes.com

June 2010

DMN2009LSS

Document number: DS31409 Rev. 6- 2

12 3 4 5

中文翻译

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