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DMN2015UFDE-7 PDF预览

DMN2015UFDE-7

更新时间: 2024-02-06 12:38:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 211K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2015UFDE-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-N3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.66
其他特性:HIGH RELIABILITY外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):10.5 A最大漏极电流 (ID):9.4 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N3JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.03 W参考标准:AEC-Q101
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN2015UFDE-7 数据手册

 浏览型号DMN2015UFDE-7的Datasheet PDF文件第2页浏览型号DMN2015UFDE-7的Datasheet PDF文件第3页浏览型号DMN2015UFDE-7的Datasheet PDF文件第4页浏览型号DMN2015UFDE-7的Datasheet PDF文件第5页浏览型号DMN2015UFDE-7的Datasheet PDF文件第6页 
DMN2015UFDE  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
0.6mm profile – ideal for low profile applications  
PCB footprint of 4mm2  
ID max  
TA = +25°C  
V(BR)DSS  
RDS(ON) max  
Package  
Low Gate Threshold Voltage  
Low On-Resistance  
10.5A  
9.4A  
11.6mΩ @ VGS = 4.5V  
15m@ VGS = 2.5V  
U-DFN2020-6  
Type E  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
20V  
Description  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(on) and yet maintain superior switching  
performance, making it ideal for high efficiency power management  
applications.  
Mechanical Data  
Case: U-DFN2020-6 Type E  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
)
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper leadframe. Solderable  
per MIL-STD-202, Method 208  
Applications  
Weight: 0.0065 grams (approximate)  
General Purpose Interfacing Switch  
Power Management Functions  
Drain  
U-DFN2020-6 Type E  
Pin1  
Gate  
Source  
Bottom View  
Pin Out  
Equivalent Circuit  
Bottom View  
Ordering Information (Note 4)  
Part Number  
DMN2015UFDE-7  
DMN2015UFDE-13  
Marking  
N4  
Reel size (inches)  
Quantity per reel  
3,000  
7
13  
N4  
10,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
N4 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: Y = 2011)  
N4  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
July 2012  
© Diodes Incorporated  
DMN2015UFDE  
Datasheet number: DS35560 Rev. 9 - 2  

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