Datasheet > DMN2016LFG

DMN2016LFG

更新时间： 2024-11-26 14:55:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	188K
描述
N-Channel Mosfet

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DMN2016LFG 数据手册

DMN2016LFG

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

ESD Protected Gate

Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

"Green" Device (Note 2)

I_D

V_(BR)DSS

R_{DS(on) max}

T_A= 25°C

5.2A

4.0A

18mΩ @ V_GS= 4.5V

30mΩ @ V_GS= 1.8V

20V

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

Case: U-DFN3030-8

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.0172 grams (approximate)

•

Power management functions

Battery Pack

Load Switch

U-DFN3030-8

D1/D2

ESD PROTECTED TO 2kV

Top View

Bottom View

Pin Configuration

Top View

Equivalent Circuit

Ordering Information (Note 6)

Part Number

DMN2016LFG-7

Case

U-DFN3030-8

Packaging

3000 / Tape & Reel

Notes:

1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

N20 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 09 for 2009)

WW = Week code (01 to 53)

N20

1 of 6

www.diodes.com

January 2012

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

12 3 4 5 6

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